SSW7N60B Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
$ Notes :
1. 250& s Pulse Test
2. T_C = 25%
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
5
4
V = 10V
GS
3
V = 20V
GS
2
1
$ Note : T_J = 25%
0
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
2000
C_iss
1500
1000
500
0
10^-1
C
oss
C
rss
$ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
10^-1
2
-55^oC
$ Notes :
1. V = 40V
2. 25^DS0& s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150%
25%
$ Notes :
1. V = 0V
2. 25^G0^S& s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
$ Note : I = 7.0 A
D
0
0
5
10
15
20
25
30
35
40
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001