SSW10N60B Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
1.5
V_GS = 20V
1.0
0.5
※ Note : T_J = 25℃
0.0
0
5
10
15
20
25
30
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
4000
3000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
2000
1000
C_oss
※ Notes :
C
rss
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
10^-1
2
-55^oC
※ Notes :
1. V = 40V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25_{G0S μ}=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
※ Note : I = 10 A
D
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001