SI6467DQ Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Typical Characteristics
50
VGS = -4.5V
-3.0V
40
-2.5V
30
-2.0V
-1.5V
20
10
0
0
0.5
1
1.5
2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
1.4
ID = -9.2A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
2
VGS = -1.5V
1.8
1.6
1.4
-2.0V
1.2
-2.5V
-3.0V
-3.5V
1
-4.5V
0.8
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
ID = -4.6A
TA = 125^oC
TA = 25^oC
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = -5V
40
TA = -55^oC
25^oC
125^oC
30
20
10
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125^oC
25^oC
-55^oC
0.001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6467DQ Rev. A (W)