SGW10N60RUF Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

40
Common Emitter
35 ^TC ^{= 25℃}
20V 15V
30
12V
25
20
15
V = 10V
GE
10
5
0
0
2
4
6
8
Collector - Emitter Voltage, V_CE [V]
Fig 1. Typical Output Characteristics
4.0
Common Emitter
V_GE = 15V
3.5
20A
3.0
2.5
10A
2.0
I = 5A
1.5
C
1.0
-50
0
50
100
150
Case Temperature, T_C [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T_C = 25℃
16
12
8
20A
4
10A
I = 5A
C
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 5. Saturation Voltage vs. V_GE
©2002 Fairchild Semiconductor Corporation
30
Common Emitter
V = 15V
25
GE
T = 25℃ ━━
C
T_C = 125℃ ------
20
15
10
5
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 2. Typical Saturation Voltage Characteristics
16
V_CC = 300V
Load Current : peak of square wave
14
12
10
8
6
4
2
Duty cycle : 50%
T = 100℃
C
Power Dissipation = 18W
0
0.1
1
10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T_C = 125℃
16
12
8
20A
4
10A
I_C = 5A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 6. Saturation Voltage vs. V_GE
SGW10N60RUF Rev. A1