SFWI9644 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V _GS
Top : - 15 V
- 10 V
10¹
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
10⁰
10^-1
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.0
1.5
V_GS = -10 V
1.0
0.5
V_GS = -20 V
@ Note : T_J = 25 ^oC
0.0
0
7
14
21
28
-I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2500
2000
C _iss
C = C + C ( C = shorted )
iss gs gd ds
C_oss= C_ds+ C_gd
C_rss= C_gd
1500
1000
500
C
oss
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
SFW/I9644
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = -40 V
3. 250 µs Pulse Test
10^-1
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V_DS = -50 V
10
V = -125 V
DS
V_DS = -200 V
5
@ Notes : I_D =-8.6 A
0
0
10
20
30
40
50
Q_G , Total Gate Charge [nC]