SFW9Z34 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V_GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
10¹
- 5.0 V
Bottom : - 4.5V
10⁰
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.4
0.3
V_GS = -10 V
0.2
0.1
V_GS = -20 V _{@ Note : TJ = 25} o_C
0.0
0
10
20
30
40
50
60
70
-I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1500
1200
C _iss
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
C _oss
900
600
C _rss
300
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
SFW/I9Z34
Fig 2. Transfer Characteristics
10¹
175 ^oC
10⁰ _{25 oC}
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = -30 V
3. 250 µs Pulse Test
10^-1
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
175 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
10
V_DS = -12 V
V_DS = -30 V
V_DS = -48 V
5
@ Notes : I_D =-18 A
0
0
5
10
15
20
25
30
35
Q_G , Total Gate Charge [nC]