SFRU2955 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V_GS
Top : - 15 V
- 10 V
- 8.0 V
10¹
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
10⁰
10^-1
10^-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.4
0.3
V = -10 V
GS
0.2
0.1
V = -20 V
GS
@ Note : T_J = 25 ^oC
0.0
0
10
20
30
40
50
60
70
-I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
800
600
C _iss
C = C + C ( C = shorted )
iss gs gd ds
C_oss= C_ds+ C_gd
C_rss= C_gd
C _oss
400
200
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
-V_DS , Drain-Source Voltage [V]
SFR/U2955
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = -30 V
3. 250 µs Pulse Test
10^-1
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
10^-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V_DS = -12 V
10
V = -30 V
DS
V = -48 V
DS
5
@ Notes : I_D =-9.4 A
0
0
2
4
6
8
10
12
14
16
Q_G , Total Gate Charge [nC]