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QSD722 Datasheet, PDF (3/4 Pages) QT Optoelectronics – PLASTIC SILICON PHOTOTRANSISTOR
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PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
Figure 1. Light Current vs. Radiant Intensity
102
VCE = 5V
GaAs Light Source
101
100
0.1
Ee - Radiant Intensity (mW/cm2)
QSD722 QSD723 QSD724
Figure 2. Angular Response Curve
100 90 80
110
70
120
60
130
50
140
40
150
30
160
20
170
10
180
0
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
1
Figure 3. Dark Current vs. Collector - Emitter Voltage
101
100
10-1
10-2
0
5
10
15
20
25
30
VCE - Collector-Emitter Voltage (V)
Figure 4. Light Current vs. Collector - Emitter Voltage
101
Ie=1mW/cm 2
Ie=0.5mW/cm2
100
Ie=0.2mW/cm 2
Ie=0.1mW/cm2
10-1
10-2
10-3
0.1
Normalized to:
VCE = 5V
Ie = 0.5mW/cm 2
TA = 25oC
1
10
VCE - Collector-Emitter Voltage (V)
DS300363 7/18/01
Figure 5. Dark Current vs. Ambient Temperature
104
Normalized to:
VCE = 25V
103 TA = 25 oC
VCE=25V
102
VCE=10V
101
100
10-1
25
50
75
100
TA - Ambient Temperature ( oC)
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