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QSC112_07 Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – Plastic Silicon Infrared Phototransistor
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Typical Performance Curves
Figure 1. Light Current vs. Radiant Intensity
102
VCE = 5V
GaAs Light Source
101
100
10-1
0.1
Ee - Radiant Intensity (mW/cm2)
Figure 2. Angular Response Curve
110° 100° 90° 80° 70°
120°
60°
130°
50°
140°
40°
150°
30°
160°
20°
170°
10°
180°
0°
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
1
Figure 3. Dark Current vs. Collector - Emitter Voltage
101
100
10-1
10-2
10-3
0
5
10
15
20
25
30
VCE - Collector-Emitter Voltage (V)
Figure 4. Light Current vs. Collector - Emitter Voltage
101
Ie = 1mW/cm 2
Ie = 0.5mW/cm 2
100
Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2
10-1
10-2
0.1
Normalized to:
VCE = 5V
Ie = 0.5mW/cm2
TA = 25oC
1
10
VCE - Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
104
Normalized to:
VCE = 25V
103 TA = 25oC
VCE = 25V
VCE = 10V
102
101
100
10-1
25
50
75
100
TA - Ambient Temperature ( o C )
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
3
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