NDT014 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I_S
Maximum Continuous Drain-Source Diode Forward Current
2.7 A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
22
A
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 2.7A (Note 2)
0.95 1.6 V
t_rr
Reverse Recovery Time
V_GS = 0 V, I_F = 10 A, dI_F/dt = 100 A/µs
140 ns
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by
design while R_θCA is determined by the user's board design.
( ) = = = ( ) × P_D t
TJ−TA
RθJ A(t)
TJ−TA
R_{θJ C}+R_θCA(t)
I
2
D
t
R_{DS(ON ) TJ}
Typical R_θJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42^oC/W when mounted on a 1 in² pad of 2oz copper.
b. 95^oC/W when mounted on a 0.066 in² pad of 2oz copper.
c. 110^oC/W when mounted on a 0.0123 in² pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT014 Rev. C1