NDP7051 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_C = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS
I_S
Maximum Continuos Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 35 A (Note 1)
T_J = 125°C
t_rr
Reverse Recovery Time
V_GS = 0 V, I_F = 70 A, dI_F/dt = 100 A/µs
I_rr
Reverse Recovery Current
THERMAL CHARACTERISTICS
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ
0.9
0.8
40 105
2
4.5
Max Units
70
A
210
A
1.3
V
1.2
150
ns
10
A
1.15 °C/W
62.5 °C/W
NDP7051 Rev. D