English
Language : 

MOC3081 Datasheet, PDF (3/11 Pages) Motorola, Inc – 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output
◁
Electrical Characteristics (TA = 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Min.
EMITTER
VF
Input Forward Voltage
IF = 30mA
IR
Reverse Leakage Current
VR = 6V
DETECTOR
IDRM1
Peak Blocking Current,
Either Direction
VDRM = 800V, IF = 0(2)
dv/dt Critical Rate of Rise of
IF = 0 (Figure 9)(4)
600
Off-State Voltage
Typ.*
1.3
0.005
10
1500
Max.
1.5
100
500
Units
V
µA
nA
V/µs
Transfer Characteristics
Symbol DC Characteristics
IFT
LED Trigger Current
VTM Peak On-State Voltage,
Either Direction
IH
Holding Current, Either
Direction
Test Conditions
Main Terminal
Voltage = 3V(3)
ITM = 100mA peak,
IF = rated IFT
Device
MOC3081M
MOC3082M
MOC3083M
All
Min. Typ.* Max. Units
15 mA
10
5
1.8
3
V
All
500
µA
Zero Crossing Characteristics
Symbol
Characteristics
Test Conditions
VINH
Inhibit Voltage (MT1–MT2 voltage IF = Rated IFT
above which device will not trigger)
IDRM2 Leakage in Inhibited State
IF = Rated IFT, VDRM = 800V,
off state
Min.
Typ.*
12
Max.
20
2
Units
V
mA
Isolation Characteristics
Symbol
Characteristics
VISO Input-Output Isolation Voltage(5)
Test Conditions
f = 60Hz, t = 1 sec.
Min.
7500
Typ.*
Max. Units
Vac(pk)
*Typical values at TA = 25°C
Notes:
2. Test voltage must be applied within dv/dt rating.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended
operating IF lies between max IFT (15mA for MOC3081M, 10mA for MOC3082M, 5mA for MOC3083M) and
absolute max IF (60mA).
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
5. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.0.3
3
www.fairchildsemi.com
 ▷