MOC3061-M_05 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)

6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol Device
Min Typ* Max Units
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
I_F = 30 mA
V_R = 6 V
V_F
All
I_R
All
1.3 1.5 V
0.005 100 µA
MOC316X-M
Peak Blocking Current, Either Direction V_DRM = 600V, I_F = 0 (note 1) I_{DRM1 MOC306X-M}
10 100
nA
10 500
Critical Rate of Rise of Off-State Voltage I_F = 0 (figure 9, note 3)
MOC306X-M 600 1500
dv/dt
MOC316X-M 1000
V/µs
TRANSFER CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol Device
Min Typ* Max Units
LED Trigger Current
(rated I_FT)
main terminal
Voltage = 3V (note 2)
Peak On-State Voltage, Either Direction
Holding Current, Either Direction
I_TM = 100 mA peak,
I_F = rated I_FT
MOC3061-M
MOC3062-M/
I_FT
MOC3162-M
MOC3063-M/
MOC3163-M
V_TM
All
I_H
All
15
10
mA
5
1.8
3
V
500
µA
ZERO CROSSING CHARACTERISTICS
Characteristics
Test Conditions
Symbol
Device
Min Typ* Max Units
Inhibit Voltage (MT1-MT2 voltage
above which device will not
trigger)
Leakage in Inhibited State
I_F = Rated I_FT
I_F = Rated I_FT,
V_DRM = 600V, off state
V_INH
I_DRM2
MOC3061-M/2M/3M
MOC3162-M/3M
All
12 20
V
12 15
150 500 µA
ISOLATION CHARACTERISTICS
Characteristics
Test Conditions Symbol Device
Min
Typ*
Max Units
Isolation Voltage
f = 60 Hz, t = 1 sec
V_ISO
All
7500
V
*Typical values at T_A = 25°C
Notes
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I_F value less than or equal to max I_FT. Therefore, recommended operating I_F lies
between max I_FT (15 mA for MOC3061-M, 10 mA for MOC3062-M & MOC3162-M, 5 mA for MOC3063-M & MOC3163-M) and
absolute max I_F (60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4. Isolation surge voltage, V_ISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common,
and Pins 4, 5 and 6 are common.
© 2005 Fairchild Semiconductor Corporation
Page 3 of 10
6/15/05