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MOC211-M Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT
SMALL OUTLINE OPTOCOUPLERS
TRANSISTOR OUTPUT
MOC211-M
MOC212-M
MOC213-M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
COUPLED
Collector-Output Current(4)
MOC211-M
MOC212-M
MOC213-M
Isolation Surge Voltage(1,2,3)
Isolation Resistance(2)
Collector-Emitter Saturation Voltage
Isolation Capacitance(2)
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
(IF = 10 mA) VF
— 1.15 1.5
V
(VR = 6.0 V) IR
— 0.001 100
µA
CIN
—
18
—
pF
(VCE = 10 V, TA = 25°C) ICEO1
—
1.0
50
nA
(VCE = 10 V, TA = 100°C) ICEO2
—
1.0
—
µA
(IC = 100 µA) BVCEO 30
100
—
V
(IE = 100 µA) BVECO 7.0
10
—
V
(f = 1.0 MHz, VCE = 0) CCE
—
7.0
—
pF
20
—
(IF = 10 mA, VCE = 10 V) CTR
50
—
100 —
f = (60 Hz AC Peak, t = 1 min.) VISO 2500 —
(V = 500 V) RISO
1011
—
(IC = 2.0 mA, IF = 10 mA) VCE (sat) —
—
(V = 0 V, f = 1 MHz) CISO
—
0.2
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω) (Fig. 6)
ton
—
7.5
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω) (Fig. 6)
toff
—
5.7
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω) (Fig. 6)
tr
—
3.2
(IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω) (Fig. 6)
tf
—
4.7
—
—
%
—
— Vac(rms)
—
Ω
0.4
V
—
pF
—
µs
—
µs
—
µs
—
µs
** Typical values at TA = 25°C
1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
4. Current Transfer Ratio (CTR) = IC/IF x 100%.
© 2005 Fairchild Semiconductor Corporation
Page 3 of 10
6/15/05