L14N1 Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – HERMETIC SILICON PHOTOTRANSISTOR

HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
8
6
NORMALIZED TO:
4
Ee = 5 mW/cm²
Ee = 20 mW/cm²
V_CE = 5 V
2
T_A = 25°C
Ee = 10 mW/cm²
PULSED
1
t_p = 300 µsec
Ee = 5 mW/cm²
.8
.6
Ee = 2 mW/cm²
.4
Ee = 1 mW/cm²
.2
.1
Ee = 0.5 mW/cm²
.08
.06
.04
Ee = 0.2 mW/cm²
.02
Ee = 0.1 mW/cm²
.01
.01 .02 .04 .06 .08 .1 .2 .4 .6 .8 1 2 4 6 8 10 20
V_{CE, COLLECTOR TO EMITTER VOLTAGE (V)}
Figure 3. Dark Current vs. Temperature
10⁵
10⁴
10³
10²
10
NORMALIZED TO:
1
T_A = 25°C
V_CE = 10 V
0.1
0
10 20 30 40 50
60 70 80 90 100
T_A, TEMPERATURE (°C)
L14N1 L14N2
Figure 2. Normalized Light Current vs. Radiation
4
2
1
8
6
4
2
1
.08
.06
.04
.02
.01
.1
.2
.4 .6 .8 1
NORMALIZED TO:
Ee = 5 mW/cm²
V_CE = 5 V
T_A = 25°C
PULSED
t_p = 300 µsec
2
4 6 8 10
20
E_e - TOTAL IRRADIANCE IN mW/cm²
Figure 4. Light Current vs. Temperature
4
IF = 50 mA
IF = 20 mA
IF = 10 mA
2
1
.8
.6
IF = 5 mA
.4
.2
IF = 2 mA
IF = 1 mA
.1
.08
.06 _{NORMALIZED TO: IF = 5 mA}
.04
V_CE = 5 V
T_A = 25°C
.02 ^PULSED
G_AA_S SOURCE (1N6265)
.01
T_J = T_A, tp = 300 µsec
-50
-26
0
IF = 0.5 mA
26
50
T_A, TEMPERATURE (°C)
75
100
Figure 5. Angular and Spectral Response
100
1
80
0.8
60
0.6
40
0.4
20
0
-40 -20 0
20 40 500
θ, ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
0.2
0
700
900
1100
λ, WAVE LENGTH
(NANOMETERS)
DS300308 6/01/01
Figure 6. Switching Speed vs. Bias
100
80
60
40
R_L = 1000 Ω
20
R_L = 500 Ω
R_L = 250 Ω
10
8
6
R_L = 1000 Ω
R_L = 500 Ω
R_L = 250 Ω
4
2 ^{RL = 100 Ω}
R_L = 100 Ω
1
.8
.6 NORMALIZED TO:
.4 ^VCC ^{= 5 V}
I_C = 10 mA
.2 ^RL ^{= 100 Ω}
T_A = 25°C
.1
.1 .2 .4 .6 .8 1
RISE TIME
R_L = 50 Ω
NORMALIZED TO:
V_CC = 5 V
I_C = 10 mA
R_L = 100 Ω
T_A = 25°C
R_L = 50 Ω
2 4 8 10 .1 .2 .4 .6 .8 1 2 4 6 8 10
I_CE, OUTPUT CURRENT (mA)
FALL TIME
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