KA2S0880 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – SPS

SPS
KA2S0880
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test condition
Drain-source breakdown voltage
Zero gate voltage drain current
BV_DSS
I_DSS
Static drain-source on resistance ^(note) R_DS(ON)
Forward transconductance ^(note)
gfs
Input capacitance
Ciss
Output capacitance
Coss
V_GS=0V, I_D=50µA
V_DS=Max., Rating, V_GS=0V
V_DS=0.8Max., Rating,
V_GS=0V, T_C=125°C
V_GS=10V, I_D=5.0A
V_DS=15V, I_D=5.0A
V_GS=0V, V_DS=25V,
f=1MHz
Reverse transfer capacitance
Crss
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on)
tr
td(off)
tf
V_DD=0.5BV_DSS, I_D=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg
V_GS=10V, I_D=8.0A,
V_DS=0.5BV_DSS (MOSFET
Qgs
switching time are
essentially independent of
Qgd
operating temperature)
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Min.
800
−
−
−
1.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
1.2
2.5
2460
210
64
−
95
150
60
−
20
70
Max.
−
50
200
1.5
−
−
−
−
90
200
450
150
150
−
−
Unit
V
µA
µA
Ω
mho
pF
nS
nC
3