ISL9V5036S3ST Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT

Typical Characteristics
45
R_G = 1KΩ, V_GE = 5V,V_dd = 14V
40
35
30
25
T_J = 25°C
20
15
T_J = 150°C
10
5
SCIS Curves valid for V_clamp Voltages of <390V
0
0
50
100 150 200 250 300 350
t_CLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.10
1.05
1.00
I_CE = 6A
V_GE = 3.7V
V_GE = 4.0V
45
R_G = 1KΩ, V_GE = 5V,V_dd = 14V
40
35
30
25
20
15
T_J = 150°C
10
T_J = 25°C
5
SCIS Curves valid for V_clamp Voltages of <390V
0
0
2
4
6
8
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.25
1.20
1.15
I_CE = 10A
V_GE = 3.7V _{VGE = 4.0V}
0.95
0.90
V_GE = 4.5V
V_GE = 5.0V
V_GE = 8.0V
1.10
1.05
V_GE = 4.5V
V_GE = 5.0V
V_GE = 8.0V
0.85
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
1.00
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
V_GE = 8.0V
V_GE = 5.0V
40 V_GE = 4.5V
V_GE = 4.0V
V_GE = 3.7V
30
50
V_GE = 8.0V
V_GE = 5.0V
40 V_GE = 4.5V
V_GE = 4.0V
V_GE = 3.7V
30
20
20
10
10
T_J = - 40°C
0
0
1.0
2.0
3.0
4.0
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
0
0
T_J = 25°C
1.0
2.0
3.0
4.0
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
©2004 Fairchild Semiconductor Corporation
ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004