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ISL9N316AD3ST Datasheet, PDF (3/11 Pages) Fairchild Semiconductor – N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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Typical Characteristic
1.2
60
1.0
VGS = 10V
0.8
40
0.6
VGS = 4.5V
0.4
20
0.2
0
0
25
50
75
100
125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
100
VGS = 5V
40
10-5
10-4
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
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