IRFR230B Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

Typical Characteristics
V
Top : 15.0^GSV
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
V_GS = 10V
1.5
V = 20V
GS
1.0
0.5
※ Note : T_J = 25℃
0.0
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
1000
500
C_iss
C
oss
C
rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
10^-1
2
-55^oC
※ Notes :
1.
2.
V25_DS0μ=
40V
s Pulse
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ _25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 40V
DS
10
V_DS = 100V
V_DS = 160V
8
6
4
2
※ Note : I = 9.0 A
D
0
0
4
8
12
16
20
24
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. C, December 2002