IRF840B_05 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Characteristics
Top: 15V.0^GSV
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250µs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
V_GS = 10V
2.0
V_GS = 20V
1.5
1.0
※ Note : T_J = 25℃
0.5
0
5
10
15
20
25
30
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
CCC^{iorssssss===CCCggdsds++CCggdd(Cds = shorted)}
2000
1500
1000
500
C_iss
C_oss
C_rss
※ Notes :
1.
2.
fV=^GS1=M0HVz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2005 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
10^-1
2
-55^oC
※ Notes :
1.
2.
V25_{DS0µ=s40PVulse}
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1.
2.
V25_{GS0µ=s0VPulse}
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 100V
V_DS = 250V
8
V_DS = 400V
6
4
2
※ Note : I_D = 8.0 A
0
0
5
10
15
20
25
30
35
40
45
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, February 2005