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| IRF644B Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET | |||
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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
V = 10V
1.2
GS
V = 20V
GS
0.9
0.6
0.3
â» Note : TJ = 25â
0.0
0
10
20
30
40
50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
â» Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
â» Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â 25â
â» Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 50V
10
DS
VDS = 125V
8
VDS = 200V
6
4
2
â» Note : ID = 14 A
0
0
5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2001
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