IRF610B Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

Typical Characteristics
10¹
Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = 10V
GS
4
V = 20V
GS
2
※ Note : T_J = 25℃
0
0
2
4
6
8
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
400
300
C
iss
C
oss
200
C
rss
※ Notes :
100
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
10¹
10⁰
10^-1
2
150^oC
25^oC
-55^oC
※ Notes :
1. V = 40V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 40V
10
V_DS = 100V
V = 160V
DS
8
6
4
2
※ Note : I_D = 3.3 A
0
0
2
4
6
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, December 2002