HUF76132SK8 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

HUF76132SK8
Electrical Specifications T_A = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING SPECIFICATIONS (V_GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
t_ON
V_DD = 15V, I_D ≅ 11.5A, R_L = 1.3Ω,
-
t_d(ON)
V_GS = 10V,
R_GS = 6.8Ω
-
t_r
(Figures 16, 21, 22)
-
Turn-Off Delay Time
t_d(OFF)
-
Fall Time
t_f
-
Turn-Off Time
t_OFF
-
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Q_g(TOT) V_GS = 0V to 10V V_DD = 15V, I_D ≅ 3.3A,
-
Q_g(5)
V_GS = 0V to 5V
R_L = 4.5Ω
I_g(REF) = 1.0mA
-
Q_g(TH) V_GS = 0V to 1V ^{(Figures 14, 19, 20)}
-
Q_gs
-
Q_gd
-
Input Capacitance
Output Capacitance
C_ISS
V_DS = 25V, V_GS = 0V,
-
f = 1MHz
C_{OSS (Figure 13)}
-
Reverse Transfer Capacitance
C_RSS
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
V_SD
I_SD = 11.5A
-
I_SD = 3.3A
Reverse Recovery Time
t_rr
I_SD = 3.3A, dI_SD/dt = 100A/µs
-
Reverse Recovered Charge
Q_RR
I_SD = 3.3A, dI_SD/dt = 100A/µs
-
Typical Performance Curves
TYP
-
10
36
65
37
-
43
24
1.63
4
10
1560
735
150
TYP
-
-
-
MAX UNITS
70
ns
-
ns
-
ns
-
ns
-
ns
155
ns
52
nC
29
nC
1.95
nC
-
nC
-
nC
-
pF
-
pF
-
pF
MAX
1.25
1.1
58
87
UNITS
V
V
ns
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
12
V_GS = 10V, R_θJA = 50^oC/W
9
6
3
V_GS = 4.5V, R_θJA = 189^oC/W
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76132SK8 Rev. B1