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HUF75639S3R4851 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
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Typical Performance Curves
HUF75639S3R4851
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125 150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
0.01
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
100
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
©2001 Fairchild Semiconductor Corporation
10-3
10-2
10-1
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
100
101
HUF75639S3R4851 Rev. B
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