HGTP12N60A4 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBTs

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Electrical Specifications T_J = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
IGBT and Diode at T_J = 125^oC
I_CE = 12A
V_CE = 390V
V_GE = 15V
R_G = 10Ω
L = 500µH
Test Circuit (Figure 20)
-
17
-
ns
-
16
-
ns
-
110
170
ns
-
70
95
ns
-
55
-
µJ
Turn-On Energy (Note 3)
E_ON2
-
250
350
µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
E_OFF
R_θJC
-
175
285
µJ
-
-
0.75
o_C/W
NOTES:
2. Turn-Off Energy Loss (E_OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I_CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E_ON1 is the turn-on loss of the IGBT only. E_ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T_J as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves Unless Otherwise Specified
60
V_GE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
70 _{TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH}
60
50
40
30
20
10
0
0
100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
300
T_C V_GE
75^oC ^15V
100 _{fMAX1 = 0.05 / (td(OFF)I + td(ON)I)}
f_MAX2 = (P_D - P_C) / (E_ON2 + E_OFF)
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.75^oC/W, SEE NOTES
T_J = 125^oC, R_G = 10Ω, L = 500µH, V_CE = 390V
10
1
3
10
20 30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20
V_CE = 390V, R_G = 10Ω, T_J = 125^oC
18
16
14
I_SC
12
10
8
6
t_SC
4
2
0
9
10
11
12
13
14
V_GE, GATE TO EMITTER VOLTAGE (V)
300
275
250
225
200
175
150
125
100
75
50
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2