HGTG30N60A4 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT

Electrical Specifications T_J = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
IGBT and Diode at T_J = 125^oC
I_CE = 30A
V_CE = 390V
V_GE = 15V
R_G = 3Ω
L = 200µH
Test Circuit - (Figure 20)
-
24
-
ns
-
11
-
ns
-
180
200
ns
-
58
70
ns
-
280
-
µJ
Turn-On Energy (Note 2)
E_ON2
-
1000 1160
µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
E_OFF
R_θJC
-
450
750
µJ
-
-
0.27
o_C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E_ON1 is the turn-on loss of the IGBT only. E_ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T_J as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (E_OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I_CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
60
V_GE = 15V
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
T_J = 150^oC, R_G = 3Ω, V_GE = 15V, L = 500µH
150
100
50
0
0
100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
T_C V_GE
300
75^oC ^15V
f_MAX1 = 0.05 / (t_d(OFF)I + t_d(ON)I)
100 ^fMAX2 ^{= (P}D ^{- P}C^{) / (E}ON2 ^{+ E}OFF⁾
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.27^oC/W, SEE NOTES
T_J = 125^oC, R_G = 3Ω, L = 200µH, V_CE = 390V
30
3
10
30
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
18
900
V_CE = 390V, R_G = 3Ω, T_J = 125^oC
16
800
14
700
I_SC
12
600
10
500
8
400
t_SC
6
300
4
200
10
11
12
13
14
15
V_GE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B2