HGT1N30N60A4D Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT1N30N60A4D
Electrical Specifications T_J = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
t _rr
R_θJC
I_EC = 30A, dI_EC/dt = 200A/µs
I_EC = 1A, dI_EC/dt = 200A/µs
IGBT
Diode
-
40
55
ns
-
30
42
ns
-
-
0.49
o_C/W
-
-
2.0
o_C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E_ON1 is the turn-on loss of the IGBT only. E_ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T_J as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E_OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I_CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
100
90
80
70
60
50
40
30
20
10
0
25
V_GE = 15V
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
T_J = 150^oC, R_G = 3Ω, V_GE = 15V, L = 100µH
150
100
50
0
0
100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
300
T_C V_GE
75^oC ^15V
100
f_MAX1 = 0.05 / (t_d(OFF)I + t_d(ON)I)
f_MAX2 = (P_D - P_C) / (E_ON2 + E_OFF)
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.49^oC/W, SEE NOTES
T_J = 125^oC, R_G = 3Ω, L = 200µH, V_CE = 390V
10
1
10
30
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
18
16
14
12
10
8
6
4
10
V_CE = 390V, R_G = 3Ω, T_J = 125^oC
I_SC
t_SC
11
12
13
14
V_GE , GATE TO EMITTER VOLTAGE (V)
900
800
700
600
500
400
300
200
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B