H11N1M Datasheet, PDF(3/10 Page) Fairchild Semiconductor – 6-Pin DIP High Speed Logic Optocouplers

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H11N1M Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 6-Pin DIP High Speed Logic Optocouplers

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Electrical Characteristics (TA = 25Â°C unless otherwise speciï¬ed.)

Individual Component Characteristics

Symbol

Parameters

EMITTER

VF Input Forward Voltage

Reverse Current

CJ Capacitance

DETECTOR

VCC

ICC(off)

IOH

Operating Voltage Range

Supply Current

Output Current, High

Test Conditions

IF = 10mA

IF = 0.3mA

VR = 5V

V = 0, f = 1.0MHz

IF = 0, VCC = 5V

IF = 0.3mA, VCC = VO = 15V

Device

All

Min.

0.75

Typ.* Max. Units

1.4

1.25

ÂµA

100 pF

100 ÂµA

Transfer Characteristics

Symbol DC Characteristics

Test Conditions

ICC(on)

VOL

IF(on)

Supply Current

Output Voltage, Low

Turn-On Threshold Current

IF = 10mA, VCC = 5V

RL=270â¦,VCC=5V,

IF = IF(on) max.

RL=270â¦, VCC = 5V(1)

IF(off) Turn-Off Threshold Current RL = 270â¦, VCC = 5V

IF(off) / IF(on) Hysteresis Ratio

RL = 270â¦, VCC = 5V

Device

All

Min.

Typ.*

6.5

Max.

0.5

Units

H11N1M 0.8

H11N2M 2.3

H11N3M 4.1

All

0.3

All

0.65

3.2 mA

0.95

Switching Speed

Symbol AC Characteristics

tPHL Propagation Delay Time

HIGH-to-LOW

Rise Time

tPLH Propagation Delay Time

LOW-to-HIGH

Fall Time

Data Rate

Test Conditions

C = 120pF, tP = 1Âµs,

RE = (2), Figure 1

C = 120pF, tP = 1Âµs,

RE = (2), Figure 1

C = 120pF, tP = 1Âµs,

RE = (2), Figure 1

C = 120pF, tP = 1Âµs,

RE = (2), Figure 1

Device

All

Min. Typ.* Max. Units

100 330 ns

7.5

150 330 ns

MHz

Isolation Characteristics

Symbol

Parameters

Test Conditions

Min. Typ.* Max. Units

VISO

Input-Output Isolation Voltage f = 60 Hz, t =1 sec.

CISO

RISO

Isolation Capacitance

Isolation Resistance

VI-O = 0V, f = 1 MHz

VI-O = Â±500 VDC

*Typical values at TA = 25Â°C

7500

0.4

1011

VPEAK

0.6

â¦

Notes:

1. Maximum IF(ON) is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current

would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band

is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.

2. H11N1: RE = 910â¦, H11N2: RE = 560â¦, H11N3: RE = 240â¦

H11N1M, H11N2M, H11N3M Rev. 1.0.2

www.fairchildsemi.com

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