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| H11G1M Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – High Voltage Photodarlington Optocouplers | |||
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Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol Characteristic
Test Conditions
Device
EMITTER
VF
Forward Voltage
IF = 10mA
All
âVF Forward Voltage
All
âTA Temp. Coefï¬cient
BVR Reverse Breakdown IR = 10µA
All
Voltage
CJ
Junction Capacitance VF = 0V, f = 1MHz
All
VF = 1V, f = 1MHz
IR
Reverse Leakage
VR = 3.0V
All
Current
DETECTOR
BVCEO Breakdown Voltage
Collector to Emitter
IC = 1.0mA, IF = 0
H11G1M
H11G2M
H11G3M
BVCBO Collector to Base
IC = 100µA
H11G1M
H11G2M
H11G3M
BV EBO
ICEO
Emitter to Base
Leakage Current
Collector to Emitter
VCE = 80V, IF = 0
VCE = 60V, IF = 0
VCE = 30V, IF = 0
VCE = 80V, IF = 0, TA = 80°C
VCE = 60V, IF = 0, TA = 80°C
All
H11G1M
H11G2M
H11G3M
H11G1M
H11G2M
Min. Typ.* Max. Unit
1.3
1.50
V
-1.8
mV/°C
3.0
25
V
50
pF
65
0.001 10
µA
100
V
80
55
100
V
80
55
7
10
V
100 nA
100 µA
Transfer Characteristics
Symbol Characteristics
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
Test Conditions
IF = 10mA, VCE = 1V
IF = 1mA, VCE = 5V
VCE(SAT) Saturation Voltage
SWITCHING TIMES
tON
Turn-on Time
tOFF Turn-off Time
IF = 16mA, IC = 50mA
IF = 1mA, IC = 1mA
IF = 20mA, IC = 50mA
RL = 100â¦, IF = 10mA,
VCE = 5V, f ⤠30Hz,
Pulse Width ⤠300µs
Device
Min. Typ.* Max. Units
H11G1M/2M 100 (1000)
H11G1M/2M
5 (500)
H11G3M
2 (200)
H11G1M/2M
0.85
H11G1M/2M
0.75
H11G3M
0.85
mA (%)
1.0
V
1.0
1.2
All
5
µs
All
100
µs
Isolation Characteristics
Symbol
Characteristic
V ISO
R ISO
C ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
*All Typical values at TA = 25°C
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
f = 1MHz
3
Device
All
All
All
Min.
7500
10 11
Typ.*
0.2
Max.
Units
VACPEAK
â¦
pF
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