H11F3SM Datasheet, PDF (3/11 Pages) Fairchild Semiconductor – Photo FET Optocouplers

Electrical Characteristics (T_A = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
EMITTER
V_F Input Forward Voltage
I_F = 16mA
All
I_R Reverse Leakage Current V_R = 5V
All
C_J Capacitance
V = 0 V, f = 1.0MHz
All
OUTPUT DETECTOR
BV_4-6 Breakdown Voltage
Either Polarity
I_4-6 = 10µA, I_F = 0
H11F1M, H11F2M
H11F3M
I_4-6 Off-State Dark Current
V_4-6 = 15 V, I_F = 0
All
V_4-6 = 15 V, I_F = 0,
All
T_A = 100°C
R_4-6 Off-State Resistance
V_4-6 = 15 V, I_F = 0
All
C_4-6 Capacitance
V_4-6 = 15 V, I_F = 0,
All
f = 1MHz
Min.
30
15
300
Typ.*
1.3
50
Max.
1.75
10
50
50
15
Unit
V
µA
pF
V
nA
µA
MΩ
pF
Transfer Characteristics
Symbol Characteristics
DC CHARACTERISTICS
R_4-6 On-State Resistance
Test Conditions
I_F = 16mA,
I_4-6 = 100µA
R_6-4 On-State Resistance
I_F = 16mA,
I_6-4 = 100µA
Resistance, non-linearity
and assymetry
AC CHARACTERISTICS
t_on Turn-On Time
t_off Turn-Off Time
I_F = 16mA,
I_4-6 = 25µA RMS,
f = 1kHz
R_L = 50Ω, I_F = 16mA,
V_4-6 = 5V
R_L = 50Ω, I_F = 16mA,
V_4-6 = 5V
Device
H11F1M
H11F2M
H11F3M
H11F1M
H11F2M
H11F3M
All
All
All
Min Typ* Max Units
200
Ω
330
470
200
Ω
330
470
2
%
45
µs
45
µs
Isolation Characteristics
Symbol
Characteristic
V _ISO
R _ISO
C _ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
*All Typical values at T_A = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
V_I-O = 500 VDC
f = 1MHz
Device
All
All
All
Min.
7500
10 ¹¹
Typ.*
0.2
Max.
Units
V_ACPEAK
Ω
pF
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
3
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