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| H11B1VM Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – General Purpose 6-Pin Photodarlington Optocoupler | |||
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Electrical Characteristics (TA = 25°C Unless otherwise speciï¬ed.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions Device
EMITTER
VF Input Forward Voltage*
IF = 10mA
4NXXM
H11B1M,
TIL113M
IR
Reverse Leakage Current*
VR = 3.0V
VR = 6.0V
4NXXM
H11B1M,
TIL113M
C Capacitance*
DETECTOR
VF = 0V, f = 1.0MHz
All
BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
4NXXM,
TIL113M
H11B1M
BVCBO Collector-Base Breakdown Voltage* IC = 100µA, IE = 0
BVECO Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
All
4NXXM
H11B1M,
TIL113M
ICEO Collector-Emitter Dark Current*
VCE = 10V, Base Open
All
Min.
0.8
30
25
30
5.0
7
Typ.
1.2
1.2
0.001
0.001
150
60
60
100
10
10
1
Max.
1.5
1.5
100
10
100
Unit
V
µA
pF
V
V
V
nA
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTICS
IC(CTR) Collector Output Current*(1, 2)
VCE(SAT) Saturation Voltage*(2)
AC CHARACTERISTICS
ton
Turn-on Time
toff
Turn-off Time
BW
Bandwidth(3, 4)
Test Conditions
IF = 10mA, VCE = 10V,
IB = 0
IF = 1mA, VCE = 5V
IF = 10mA, VCE = 1V
IF = 8mA, IC = 2.0mA
IF = 1mA, IC = 1mA
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100â¦
IF = 10mA, VCE = 10V,
RL = 100â¦
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100â¦
IF = 10mA, VCE = 10V,
RL = 100â¦
Device
4N32M,
4N33M
4N29M,
4N30M
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
4NXXM,
TIL113M
H11B1M
4N32M,
4N33M,
TIL113M
4N29M,
4N30M
H11B1M
Min.
50 (500)
10 (100)
5 (500)
30 (300)
Typ.
25
18
30
Max. Unit
mA (%)
1.0
V
1.25
1.0
5.0
µs
100
µs
40
kHz
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
3
www.fairchildsemi.com
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