H11AV1M Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Phototransistor Optocouplers

Electrical Characteristics (T_A = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
V_F
Input Forward Voltage (I_F = 10mA)
I_R
Reverse Leakage Current
DETECTOR
T_A = 25°C
T_A = -55°C
T_A = 100°C
V_R = 6.0V
BV_CEO
BV_CBO
BV_ECO
I_CEO
I_CBO
C_CE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I_C = 1.0mA, I_F = 0
I_C = 100µA, I_F = 0
I_E = 100µA, I_F = 0
V_CE = 10V, I_F = 0
V_CB = 10V
V_CE = 0V, f = 1MHz
Min. Typ.* Max. Unit
0.8 1.18 1.5
V
0.9 1.28 1.7
0.7 1.05 1.4
10
µA
70
100
V
70
120
V
7
10
V
1
50
nA
0.5
nA
8
pF
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTIC
CTR Current Transfer Ratio,
Collector to Emitter
Test Conditions
I_F = 10mA, V_CE = 10V
V_{CE (SAT)} Collector-Emitter
Saturation Voltage
AC CHARACTERISTIC
T_ON Non-Saturated Turn-on
Time
T_ON Non Saturated Turn-off
Time
I_C = 2mA, I_F = 20mA
I_C = 2mA, V_CC = 10V,
R_L = 100Ω (Fig. 11)
I_C = 2mA, V_CC = 10V,
R_L = 100Ω (Fig. 11)
Device Min. Typ.* Max. Unit
H11AV1M 100
H11AV1AM
H11AV2M 50
H11AV2AM
All
300 %
0.4
V
All
15
µs
All
15
µs
Isolation Characteristics
Symbol
Parameters
V_ISO
C_ISO
R_ISO
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
*Typical values at T_A = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
V_I-O = 0V, f = 1MHz
V_I-O = 500 VDC
Min.
7500
10¹¹
Typ.*
0.2
Max.
2
Units
V_AC(pk)
pF
Ω
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
3
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