H11AV1-M Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M
H11AV2-M
H11AV2A-M
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage (I_F = 10 mA)
Reverse Leakage Current
DETECTOR
T_A = 25°C
T_A = -55°C
V_F
T_A = 100°C
(V_R = 6.0 V)
I_R
0.8
1.18
1.5
0.9
1.28
1.7
V
0.7
1.05
1.4
10
µA
Collector-Emitter Breakdown Voltage
(I_C = 1.0 mA, I_F = 0) BV_CEO
70
100
V
Collector-Base Breakdown Voltage
(I_C = 100 µA, I_F = 0) BV_CBO
70
120
V
Emitter-Collector Breakdown Voltage
(I_E = 100 µA, I_F = 0) BV_ECO
7
10
V
Collector-Emitter Dark Current
(V_CE = 10 V, I_F = 0)
I_CEO
1
50
nA
Collector-Base Dark Current
(V_CB = 10 V)
I_CBO
0.5
nA
Capacitance
(V_CE = 0 V, f = 1 MHz)
C_CE
8
pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Note
* Typical values at T_A = 25°C
Test Conditions Symbol Min
(f = 60 Hz, t = 1 sec)
(V_I-O = 500 VDC)
(V_I-O = 0 V, f = 1 MHz)
V_ISO
R_ISO
C_ISO
7500
10¹¹
Typ*
0.2
Max
2
Units
Vac(pk)
Ω
pF
© 2005 Fairchild Semiconductor Corporation
Page 3 of 10
6/15/05