FQT7P06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET

Typical Characteristics
Top : - 15V.0^GSV
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
10^{0 Bottom : - 4.5 V}
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.2
1.0
V = - 10V
GS
0.8
0.6
V_GS = - 20V
0.4
0.2
※ Note : T_J = 25℃
0.0
0
4
8
12
16
20
24
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C =C
rss gd
500
C
oss
400
C
※ Notes :
iss
1. V = 0 V
GS
300
2. f = 1 MHz
200
C_rss
100
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10⁰
150℃
25℃
10^-1
2
-55℃
※ Notes :
1.
2.
V25_DS0μ=s-3P0uVlse
Test
4
6
8
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150℃ 25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
10^-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
V = -48V
DS
6
4
2
※ Note : I_D = -7.0 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001