FQT7N10LTF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

Typical Characteristics
V_GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
V = 5V
GS
0.9
V = 10V
GS
0.6
0.3
※ Note : T = 25℃
J
0.0
0
5
10
15
20
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
400
※ Notes :
300
C
iss
1. V_GS = 0 V
2. f = 1 MHz
C
oss
200
C
100
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. C0
150℃
10⁰
25℃
-55℃
10^-1
0
※ Notes :
1.
2.
2V5^D0^Sμ^=s30PVulse
Test
2
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
8
V = 80V
DS
6
4
2
※ Note : I_D = 7.3 A
0
0
1
2
3
4
5
6
7
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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