FQT3P20 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V P-Channel MOSFET

Typical Characteristics
Top : -15V.0^GSV
-10.0 V
-8.0 V
10⁰
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = - 10V
GS
6
V = - 20V
GS
4
2
※ Note : T_J = 25℃
0
0
2
4
6
8
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
400
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
300
C
iss
C_oss
200
※ Notes :
1. V_GS = 0 V
C
2. f = 1 MHz
rss
100
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10⁰
150℃
10^-1
2
25℃
-55℃
※ Notes :
1.
2.
2V5^DS0μ⁼
-40V
s Pulse
Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150℃
25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
10^-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -40V
10
DS
V_DS = -100V
8
V_DS = -160V
6
4
2
※ Note : I_D = -2.8 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001