FQPF85N06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10²
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.015
0.012
0.009
V = 10V
GS
V_GS = 20V
0.006
0.003
0.000
0
※ Note : T_J = 25℃
50
100
150
200
250
300
350
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8000
6000
4000
2000
C
oss
C_iss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s30PVulse
Test
10⁰
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
0.2
175℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 30V
V = 48V
DS
8
6
4
2
※ Note : I = 85A
D
0
0
20
40
60
80
100
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001