FQPF7N60 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1

Notes :
1. 250s Pulse Test
2. T_C = 25
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
V = 20V
GS
1.5
1.0
0.5
0.0
0

Note : T = 25
J
5
10
15
20
25
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1600
1200
800
400
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd

Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150

25

-55


Notes :
1. V =50V
DS
2. 250s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150

25


Notes :
1. V =0V
2. 25^G0^S s Pulse Test
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 120V
DS
10
V = 300V
DS
V = 480V
DS
8
6
4
2

Note : I = 7.4A
D
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000