FQPF7N10 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.4
1.2
1.0
V_GS = 10V
0.8
V = 20V
GS
0.6
0.4
0.2
※ Note : T_J = 25℃
0.0
0
3
6
9
12
15
18
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
300
※ Notes :
C
iss
1. V_GS = 0 V
2. f = 1 MHz
C_oss
200
100
C
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
175℃
10⁰
25℃
10^-1
2
-55℃
※ Notes :
1. V_DS = 40V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
175℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V_DS = 80V
8
6
4
2
※ Note : I_D = 7.3 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A4, December 2000