FQPF6N90 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 900V N-Channel MOSFET

Typical Characteristics
Top :
10¹
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T =25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4
3
V = 10V
GS
V = 20V
GS
2
1
※ Note : T_J = 25℃
0
0
5
10
15
20
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
1500
1000
500
C_oss
※ Notes :
1. V = 0 V
C
GS
2. f = 1 MHz
rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V =50V
2. 25^DS0μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 180V
DS
10
V = 450V
DS
V = 720V
DS
8
6
4
2
※ Note : I_D = 5.8A
0
0
5
10
15
20
25
30
35
40
45
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002