FQPF6N70 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 700V N-Channel MOSFET

Typical Characteristics
10¹ Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4
3
V = 10V
GS
V = 20V
GS
2
1
※ Note : T = 25℃
J
0
0
4
8
12
16
20
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1600
1200
800
400
C
iss
C
oss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
2
150℃
25℃
-55℃
※ Notes :
1. V = 50V
2. 25^DS0μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25^GS0μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
V = 140V
DS
10
V_DS = 350V
V = 560V
DS
8
6
4
2
※ Note : I = 6.2 A
D
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000