FQPF6N45 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 450V N-Channel MOSFET

Typical Characteristics
V_GS
10^{1 Top :}
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4.0
3.5
3.0
V_GS = 10V
2.5
V_GS = 20V
2.0
1.5
1.0
0.5
※ Note : T_J = 25℃
0.0
0
2
4
6
8 10 12 14 16 18
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
C
iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C
oss
400
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
C_rss
200
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150℃
10⁰
10^-1
2
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s50PVulse
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ _25℃
※ Notes :
1. V = 0V
2. 25^GS0μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 90V
V_DS = 225V
V = 360V
8
DS
6
4
2
※ Note : I_D = 6.2A
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A1, January 2001