FQPF60N03L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET

Typical Characteristics
Top : 10.V0^GV^S
8.0 V
6.0 V
10²
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10¹
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
40
30
V = 5V
GS
20
V_GS = 10V
10
※ Note : T_J = 25℃
0
0
40
80
120
160
200
240
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
C
iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
1000
C
rss
500
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s15PVulse
Test
10⁰
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10²
10¹
10⁰
0.2
175℃ 25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 15V
10
DS
V = 24V
DS
8
6
4
2
※ Note : I_D = 60A
0
0
5
10
15
20
25
30
35
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001