FQPF5P20 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V P-Channel MOSFET

• Improved dv/dt capability
10¹
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
10⁰ Bottom : -5.5 V
Typic 10¹
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10^-2
10^-1
10⁰
10¹
al -V , Drain-Source Voltage [V]
DS
Characteristics
Figure 1. On-Region Characteristics
10⁰
150℃
10^-1
2
25℃
-55℃
※ Notes :
1. V_DS = -40V
2. 250μs Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
3.0
2.4
V_GS = - 10V
V = - 20V
GS
1.8
1.2
0.6
※ Note : T_J = 25℃
0.0
0
3
6
9
12
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
750
600
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
450
C
iss
C
oss
300
※ Notes :
150
C
rss
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -40V
10
DS
V_DS = -100V
8
V_DS = -160V
6
4
2
※ Note : I_D = -4.8 A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, May 2000