FQPF5N50CFTU Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Low gate charge ( typical 18nC)

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
10¹
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
Notes :
1. 250µs Pulse Test
2.
T
C
=
25°C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4.5
4.0
3.5
V = 10V
GS
3.0
2.5
2.0
V = 20V
GS
1.5
1.0
Note
:
T
J
=
25°C
0.5
0
5
10
15
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
10^-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
10¹
150°C
25°C
10⁰
-55°C
10^-1
2
Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
10^-1
0.2
150?
25?
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
V = 100V
DS
V = 250V
8
DS
V = 400V
DS
6
4
2
Note : I = 5A
D
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
3
FQPF5N50CF Rev. B
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