FQPF5N20L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET

Typical Characteristics
10¹ _{Top :}
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μs Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = 5V
GS
V = 10V
4
GS
2
※ Note : T = 25℃
J
0
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
300
C
iss
200
100
0
10^-1
C
※ Notes :
oss
1. V_GS = 0 V
2. f = 1 MHz
C
rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
150℃
10⁰
25℃
10^-1
0
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 40V
8
V = 100V
DS
V = 160V
DS
6
4
2
※ Note : I_D = 4.5 A
0
0
2
4
6
8
10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000