FQPF50N06L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V LOGIC N-Channel MOSFET

Typical Characteristics
V_GS
Top : 10.0 V
10²
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
60
50
40
V = 5V
GS
30
V = 10V
GS
20
10
※ Note : T_J = 25℃
0
0
25
50
75
100 125 150 175 200
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3000
C
oss
C
iss
2000
C
1000
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
10⁰
0
2
-55℃
※ Notes :
1.
2.
V25_DS0μ=s25PVulse
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
0.2
175℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 30V
V = 48V
8
DS
6
4
2
※ Note : I_D = 52.4A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001