FQPF4N80 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET

Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10⁰
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
7
6
V = 10V
GS
5
V = 20V
GS
4
3
※ Note : T = 25℃
J
2
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
600
C
oss
※ Notes :
400
1. V_GS = 0 V
2. f = 1 MHz
C
rss
200
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10⁰
10^-1
2
150^oC
25^oC
-55^oC
※ Notes :
1. V_DS = 50V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
8
V_DS = 640V
6
4
2
※ Note : I_D = 3.9A
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000