FQPF30N06L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V LOGIC N-Channel MOSFET

Typical Characteristics
10²
V_GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
80
60
V = 5V
GS
V_GS = 10V
40
20
※ Note : T_J = 25℃
0
0
20
40
60
80
100
120
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
C
oss
C
iss
1000
C
rss
500
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss
ds
gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
-55℃
※ Notes :
1. V_DS = 25V
2. 250μ s Pulse Test
10⁰
0
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
175℃
10⁰
0.4
0.6
25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 30V
V = 48V
8
DS
6
4
2
※ Note : I_D = 32A
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001