FQPF30N06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

Typical Characteristics
10² _{Top :}
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
60
V = 10V
GS
V_GS = 20V
40
20
※ Note : T_J = 25℃
0
0
20
40
60
80
100
120
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
1000
C
oss
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
500
C
rss
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
-55℃
※ Notes :
1.
2.
V25_DS0μ=s25PVulse
Test
10⁰
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
0.2
175℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 30V
V = 48V
DS
8
6
4
2
※ Note : I_D = 30A
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001